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J. Korean Ceram. Soc. > Volume 41(3); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(3): 197.
doi: https://doi.org/10.4191/kcers.2004.41.3.197
저손실 광도파로 제작을 위해 PECVD 법에 의해 증착된 SiON/SiO2 다층박막
김용탁, 김동신1, 윤대호
성균관대학교 신소재공학과
1성균관대학교 신소재공학
SiON/SiO2 Multilayer Deposited by PECVD for Low-Loss Waveguides
ABSTRACT
SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.ጊ䜀Ѐ㘲〻Ԁ䭃䑎䷙ᜓ੸0〴㬅K䍄乍
Key words: PECVD, Silicon dioxide, Silicon oxynitride, Annealing
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