| 저손실 광도파로 제작을 위해 PECVD 법에 의해 증착된 SiON/SiO2 다층박막 |
| 김용탁, 김동신1, 윤대호 |
성균관대학교 신소재공학과
1성균관대학교 신소재공학 |
| SiON/SiO2 Multilayer Deposited by PECVD for Low-Loss Waveguides |
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| ABSTRACT |
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SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly. ጊ䜀 Ѐ㘲〻Ԁ䭃䑎䷙ᜓ 0〴㬅K䍄乍 |
| Key words:
PECVD, Silicon dioxide, Silicon oxynitride, Annealing |
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