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J. Korean Ceram. Soc. > Volume 41(3); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(3): 266.
doi: https://doi.org/10.4191/kcers.2004.41.3.266
BaTiO3에서 SiO2 첨가에 의한 비정상 입성장과 단결정 성장
김재석, 허태무1, 이종봉1, 이호용
선문대학교 재료화학공학부
1선문대학교 재료화학공학
Effect of SiO2 on Abnormal Grain Growth and Single Crystal Growth in BaTiO3
A very small amount of SiO$_2$ was locally added in sintered BaTiO$_3$ ceramics and then heat-treated at 135$0^{circ}C$. In the region where SiO$_2$ was not added, grain growth occurred very slowly. In the region where a very small amount of SiO$_2$ was added, however, grain growth occurred very actively. After long time annealing at 135$0^{circ}C$, abnormal grains appeared only in the part where SiO$_2$ was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO$_2$ was added. These results showed that centimeter-sized BaTiO$_3$ single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.
Key words: $RaTiO_3$, Abnormal grain growth, Single crystal, $SiO_2$, Non-uniform distribution of liquid
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