졸-겔법에 의한 (YbxY1-x)MnO3강유전체 박막제조 |
강승구, 이기호 |
경기대학교 첨단산업공학부 |
Preparation of Ferroelectric (YbxY1-x)MnO3 Thin Film by Sol-Gel Method |
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ABSTRACT |
The ferroelectric (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ thin films were fabricated by sol-gel method using Y-acetate, Yb-acetate, and Mn-acetate as raw materials. The stable (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ precursor solution (sol) was prepared through the reflux process with acetylaceton as a catalyst and coated on Si(100) substrate by spin coating. The heat treatment temperature and, Rw ($H_2O$/alkoxide moi ratio) dependence on crystallinity of thin films were studied. The lowest temperature for obtaining YbMn $O_3$phase and the optimum heat-treatment conditions were proved as at 7$50^{circ}C$ and 80$0^{circ}C$, respectively. The hexagonal YbMn $O_3$with c-axis preferred orientation could be obtained at Rw=1 condition. The remanent polarization for the thin films of x=0 or 1 was about 200 nC/㎤ while, for the specimens ot 0< x< 1, were 50∼100 nC/$textrm{cm}^2$.EX>. |
Key words:
FRAM, Sol-gel, Ferroelectric, $ReMnO_3$, Thin film |
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