| 투명전도성 ZnO 박막의 특성에 미치는 In2O3 첨가에 따른 영향 |
| 이춘호, 김선일 |
| 계명대학교 재료공학과 |
| Effect of In2O3 Doping on the Properties of ZnO Films as a Transparent Conducting Oxide |
| Choon-Ho Lee, Sun-Il Kim |
| Department of Materials Engineering, Keimyung University |
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| ABSTRACT |
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Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {times} 10^{-3} {Omega}cm$. The transmittance was higher than 85% throughout the visible range. |
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