Characteristics Analysis and Manufacture of Ta2O5 Thin Films Prepared by Dual Ion-beam Sputtering Deposition with Change of Ar/O2Gas Flow Rate of Assist Ion Beam

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doi:2003.40.12.1165

J. Korean Ceram. Soc. > Volume 40(12); 2003 > Article

Journal of the Korean Ceramic Society 2003;40(12): 1165.
doi: https://doi.org/10.4191/kcers.2003.40.12.1165

이중 이온빔 스퍼터링 방식을 사용한 보조 이온빔의 Ar/O₂가스 유량에 따른 Ta₂O₅ 박막의 제조 및 특성분석

윤석규, 김회경¹, 김근영, 김명진¹, 이형만¹, 이상현², 황보창권², 윤대호

성균관대학교 신소재공학과
¹전자부품연구원 광부품연구센터
²인하대학교 물리학과

Characteristics Analysis and Manufacture of Ta₂O₅ Thin Films Prepared by Dual Ion-beam Sputtering Deposition with Change of Ar/O₂Gas Flow Rate of Assist Ion Beam

ABSTRACT

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).nm).

Key words: $Ta_2$$O_{5}$, Dual ion beam sputtering, Refractive index, $Ar:O_2$, Roughness