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J. Korean Ceram. Soc. > Volume 40(9); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(9): 842.
doi: https://doi.org/10.4191/kcers.2003.40.9.842
음극전착법을 이용한 α-Fe2O3 막의 광전기화학적특성
이은호, 주오심1, 정광덕1, 최승철
아주대학교 재료공학과
1한국과학기술연구원 나노-환경 연구센터
Photoeletrochemical Properties of α-Fe2O3 Film Deposited on ITO Prepared by Cathodic Electrodeposition
Semiconducting $alpha$-Fe$_2$O$_3$ film was prepared by the cathodic electrodeposition method on Indium Tin Oxide (ITO) substrate for photoelectrochemical cell application. After heat treatment at 50$0^{circ}C$, the phase was changed from Fe to $alpha$-Fe$_2$O$_3$. The phase, morphology, absorbance, and photocurrent density (A/$textrm{cm}^2$) of the film depended on the preparation conditions: deposition time, applied voltage, and the duration of heat treatment. The $alpha$-Fe$_2$O$_3$ film was characterized by X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM), and UV -Visible Spectrophotometer. The stability of the $alpha$-Fe$_2$O$_3$ film in aqueous solution was tested at zero bias potential under the white-light source of 100 mW/$textrm{cm}^2$. The apparent grain size of the films formed at -2.0 V was larger than that grown at -2.5 V. The $alpha$-Fe$_2$O$_3$ film deposited at -2.0 V for 180 s and heat-treated at 50$0^{circ}C$ for 1 h showed the predominant photocurrent of 834$mu$A/$textrm{cm}^2$.
Key words: Cathodic electrode position, $\alpha$-$Fe_2$$O_3$, Photoelectrochemical properties
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