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J. Korean Ceram. Soc. > Volume 40(9); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(9): 886.
doi: https://doi.org/10.4191/kcers.2003.40.9.886
Helicon Wave Plasma에 의해 식각된 단결정 LiNbO3의 표면 형상 및 특성
박우정, 양우석1, 이한영1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품센터
Surface Morphology and Characteristics of LiNbO3 Single Crystal by Helicon Wave Plasma Etching
The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.ned.
Key words: $LiNbO_3$, Dry etching, Helicon wave plasma, Surface roughness
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