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J. Korean Ceram. Soc. > Volume 40(8); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(8): 765.
doi: https://doi.org/10.4191/kcers.2003.40.8.765
비행시간형 직충돌 이온산란 분광법을 이용한 Si(100) 면의 구조해석
황연, 이태근
서울산업대학교 신소재공학과
Si(100) Surface Structure Studied by Time-Of-Flight Impact-Collision ton Scattering Spectroscopy
Time-Of-flight Impact-Collision Ion Scattering Spectroscopy (TOF-ICISS) using 2 keV He$^$+/ ion was applied to study the geometrical structure of the Si(100) surface. The scattered ion intensity was measured along the [011] azimuth varying the incident angle. The focusing effects were appeared at the incident angles of 20$^{circ}$, 28$^{circ}$, 46$^{circ}$, 63$^{circ}$, and 80$^{circ}$. The Si atomic position was simulated by calculating the shadow cone to explain the five focusing effects. The four focusing effects at 28$^{circ}$, 46$^{circ}$, 63$^{circ}$, and 80$^{circ}$ resulted from the {011} surface where no dimers existed on the outermost surface. On the contrary, the scattering between two Si atoms in a dimer resulted in the focusing peak at 20$^{circ}$.
Key words: Atomic structure, Si(100) surface, Impact-collision ion scattering spectroscopy, Time-of-fight
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