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J. Korean Ceram. Soc. > Volume 40(8); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(8): 770.
doi: https://doi.org/10.4191/kcers.2003.40.8.770
단결정 실리콘의 기계적 손상에 대한 열처리 효과
정상훈, 정성민, 오한석1, 이홍림
연세대학교 세라믹공학과
1(주)새빛 생산기술연구소
Thermal Annealing Effect on the Machining Damage for the Single Crystalline Silicon
#140 mesh and #600 mesh wheels were adopted to grind (111) and (100) oriented single crystalline silicon wafer and the grinding induced change of the surface integrity was investigated. For this purpose, microroughness, residual stress and phase transformation were analyzed for the ground surface. Microroughness was analyzed using AFM (Atomic Force Microscope) and crystal structure was analyzed using micro-Raman spectroscopy. The residual stress and phase transformation were also analyzed after thermal annealing in the air. As a result, microroughness of (111) wafer was larger than that of (100) wafer after grinding. It was observed using Raman spectrum that the silicon was transformed from diamond cubic Si-I to Si-III(body centered tetragonal) or Si-XII(rhombohedral). Residual stress relaxation was also shown in cavities which were produced after grinding. The thermal annealing was effective for the recovery of the silicon phase to the original phase and the residual stress relaxation.
Key words: Silicon, Microroughness, Micro-Raman spectroscopy, Residual stress, Phase transformation
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