Growing and Luminous Characterization of ZnGa<sub>2</sub>O<sub>4</sub>:Mn Thin Film Deposited by RF Magnetron Sputtering

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doi:2003.40.7.652

J. Korean Ceram. Soc. > Volume 40(7); 2003 > Article

Journal of the Korean Ceramic Society 2003;40(7): 652.
doi: https://doi.org/10.4191/kcers.2003.40.7.652

RF 스퍼터링 방법에 의한 ZnGa₂O₄:Mn 박막의 성장거동과 발광특성

정승묵, 김영진

경기대학교 재료공학과

Growing and Luminous Characterization of ZnGa₂O₄:Mn Thin Film Deposited by RF Magnetron Sputtering

ABSTRACT

The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

Key words: $ZnGa_2$$O_4$, Mn thin film, Annealing condition, PL, CL