| MFS 구조로 적층된 Yttrium Manganates의 기판 변화에 따른 특성 연구 |
| 강승구 |
| 경기대학교 첨단산업공학부 신소재공학전공 |
| Properties of Yttrium Manganates with MFS Structure Fabricated on Various Substates |
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| ABSTRACT |
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Effects of substrates and buffer layer upon the formation of crystalline phases and ferroelectricity of $YMnO_3$ thin films were investigated. The hexagonal $YMnO_3$ was easily formed on Si(100) while the mixed phases, hexagonal and orthorhombic $YMnO_3$, on $Pt(111)/TiO_2/SiO_2/Si$ substrate. When the $Y_2O_3$ buffer layer of 70 nm thick was inserted between the substrates and the $YMnO_3,$ the c-axis oriented hexagonal single phase formed on both substrates, Si(100) and $Pt(111)/TiO_2/SiO_2/Si$. The leakage current density of the hexagonal $YMnO_3$ thin films was lower than that consisting of mixed phases, hexagonal and orthorhombic. Furthermore the hexagonal $YMnO_3$ with c-axis preferred orientation showed the lowest leakage current density. The remnant polarization from a P-E hysteresis curve for the $YMnO_3$ formed on Si(100) was 0.14 without buffer layer and $0.24_{mu}C/cm^2$ for that with buffer layer. For the $Pt(111)/TiO_3/SiO_3/Si$ substrates, the specimen without $Y_2O_3$buffer layer did not show the hysteresis curve, while the buffer-layered has the remnant polarization of $1.14_{mu}C/cm^2$. It was concluded that the leakage current density and the ferroelectricity for the $YMnO_3$ thin films could be controlled by varying crystalline phases and their preferred orientation which depend on the kind of substrates and whether the $Y_2O_3$buffer layer exist or not. |
| Key words:
MFS, $YMnO_3$thin films, Hexagonal, Substrates, ${Y_2}{O_3}$buffer layer, Ferroelectricity, Sol-gel |
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