CeO2 연마입자의 합성온도와 수계안정성이 CMP 특성에 미치는 영향 |
임건자, 김태은, 이종호, 김주선, 이해원, 현상훈1 |
한국과학기술연구원 나노재료연구센터 1연세대학교 세리믹공학과 |
Effects of Synthetic Temperature and Suspension Stability of CeO2 Abrasive on CMP Characteristics |
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ABSTRACT |
CMP(Chemical Mechanical Planarization) slurry for STI process is made by mechanically synthesized$CeO_2$as abrasive. The abrasive can be stabilized by electrostatic or steric stabilization in aqueous slurry and steric stabilization is more effective for long-term stability. Blanket-type$SiO_2$and $Si_3N_4$ wafers are polished with CMP slurry containing$CeO_2$synthesized in 50$0^{circ}C$ or $700^{circ}C$. Removal rate and surface uniformity of$SiO_2$and$Si_3N_4$wafer and selectivity are influenced by synthetic condition of abrasive, suspension stability and pH of slurries. |
Key words:
$CeO_2$Chemical mechanical planariration, Synthetic temperature, Suspension stability, pH |
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