Self-patterning 기술을 이용한 강유전체 메모리 전극용La0.5Sr0.5CoO3박막의 제조에 관한 연구 |
손현수, 김병호 |
고려대학교 재료공학과 |
A Study on Fabrication of La0.5Sr0.5CoO3Thin Films as an Electrode for Ferroelectric Memory by Self-patterning Technique |
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ABSTRACT |
Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{circ}C$. |
Key words:
Self-patterning Sol-gel method, LSCO thin film |
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