Effect of Glycine Adsorption on Polishing of Silicon Nitride in Chemical Mechanical Planarization Process

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doi:2003.40.1.77

J. Korean Ceram. Soc. > Volume 40(1); 2003 > Article

Journal of the Korean Ceramic Society 2003;40(1): 77.
doi: https://doi.org/10.4191/kcers.2003.40.1.077

CeO₂ 슬러리에서 Glycine의 흡착이 질화규소 박막의 연마특성에 미치는 영향

김태은, 임건자¹, 이종호¹, 김주선¹, 이해원¹, 임대순

고려대학교 재료공학과
¹한국과학기술연구원 나노재료연구센터

Effect of Glycine Adsorption on Polishing of Silicon Nitride in Chemical Mechanical Planarization Process

ABSTRACT

Adsorption of glycine on$Si_3N_4$powder surface has been investigated, which is supposed to enhance the formation of passive layer inhibiting oxidation in aqueous solution. In the basic solution, multinuclear surface complexing between Si and dissociated ligands was responsible for the saturated adsorption of glycine. In addition, $CeO_2$-based CMP slurry containing glycine was manufactured and then applied to planarize$SiO_2$and$Si_3N_4$thin film. Owing to the passivation by glycine, the removal rates, Rh, were decreased, however, the selectivities, RE(SiO$_2$)/RR($Si_3N_4$), increased and showed maximum at pH=12. The suppressed oxidation and dissolution by adsorbate were correlated with the dissociation behavior of glycine at different pH and subsequent chemical adsorption.

Key words: Chemical mechanical planarization, Selectivity, $CeO_2$ Glycine, Adsorption