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J. Korean Ceram. Soc. > Volume 39(6); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(6): 594.
doi: https://doi.org/10.4191/kcers.2002.39.6.594
실리카 광도파로의 Core층인 Silicon Oxynitride후박의 굴절률 제어
김용탁, 조성민, 윤석규, 서용곤1, 임영민1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터
Refractive Index Control of Silicon Oxynitride Thick Films on Core Layer of Silica Optical Waveguide
Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${mu}$m.
Key words: PECVD, Silicon oxynitride, Annealing, Silica optical waveguide
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