| DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성 |
| 김광식, 류호진, 장건익1 |
한국화학연구원 화학소재연구부
1충북대학교 재료공학과 |
| Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties |
| Kwang-Sik Kim, Ho-Jin Ryu, Gun-Eik Jang1 |
Advanced Materials Division, Korea Research Institute of Chemical Technology
1Department of Materials Science and Engineering, Chungbuk National University |
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| ABSTRACT |
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In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${AA}$)/Cr(200 ${AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${mu}m$. |
| Key words:
Carbon nanotubes, ICPHFDVD, FED(Field Emission Display), Vertical growth |
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