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J. Korean Ceram. Soc. > Volume 39(8); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(8): 742.
doi: https://doi.org/10.4191/kcers.2002.39.8.742
R.F. Magnetron Sputtering으로 다양한 Interlayer 층위에 형성시킨 PZT 박막의 미세구조와 강유전 특성
박철호, 최덕영, 손영국
부산대학교 무기재료공학과
Microstructure and Ferroelectric Properties of PZT Thin Films Deposited on various Interlayers by R.F. Magnetron Sputtering
Chul-Ho Park, Duck-Young Choi, Young-Guk Son
Department of Inorganic Materials and Engineering, Pusan National University
The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${varepsilon}_r$=414.94, tan${delta}$=0.0241, Pr=22${mu}C/cm^2$).
Key words: $(Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3)$ PZT, Thin film, Ferroelectric properties, Interlayer
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