| 졸겔법으로 제조한 ErMnO3 박막의 강유전 특성 |
| 김유택, 김응수, 채정훈, 류재호 |
| 경기대학교 재료공학과 |
| Ferroelectric Properties of ErMnO3 Thin Film Prepared by Sol-gel Method |
| Yoo-Taek Kim, Eung Soo Kim, Jung-Hoon Chae, Jae-Ho Ryu |
| Department of Materials Engineering, Kyonggi University |
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| ABSTRACT |
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Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained. |
| Key words:
$ErMnO_3$, Remanent polarization, Dielectric constant, Dielectric loss, Coercive field |
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