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J. Korean Ceram. Soc. > Volume 39(9); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(9): 840.
doi: https://doi.org/10.4191/kcers.2002.39.9.840
R.F. Magnetron Sputtering법을 이용한 ITO 박막 오존 가스센서의 제조 및 특성
권정범, 정경근, 이동수1, 하조웅1, 유광수
서울시립대학교 신소재공학과
1이노스텍(주)
The Fabrication of ITO Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering Method and their Characterization
Jung-Bum Kwon, Kyoung-Keun Jung, Dong-Su Lee1, Jo-Woong Ha1, Kwang-Soo Yoo
Department of Materials Science and Engineering, The University of Seoul
1Inostek Inc.
ABSTRACT
As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{circ}C$ and 500$^{circ}C$, respectively and then some specimens were annealed at 500$^{circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved.
Key words: R.F. magnetron sputtering method, ITO thin films, Ozone gas sensors
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