| R.F. Magnetron Sputtering법을 이용한 ITO 박막 오존 가스센서의 제조 및 특성 |
| 권정범, 정경근, 이동수1, 하조웅1, 유광수 |
서울시립대학교 신소재공학과
1이노스텍(주) |
| The Fabrication of ITO Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering Method and their Characterization |
| Jung-Bum Kwon, Kyoung-Keun Jung, Dong-Su Lee1, Jo-Woong Ha1, Kwang-Soo Yoo |
Department of Materials Science and Engineering, The University of Seoul
1Inostek Inc. |
|
|
|
|
|
| ABSTRACT |
|
As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{circ}C$ and 500$^{circ}C$, respectively and then some specimens were annealed at 500$^{circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved. |
| Key words:
R.F. magnetron sputtering method, ITO thin films, Ozone gas sensors |
|
PDF Links
Full text via DOI
Download Citation 
