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J. Korean Ceram. Soc. > Volume 38(12); 2001 > Article
Journal of the Korean Ceramic Society 2001;38(12): 1150.
실리카 광도파로용 SiON 후막 특성에서 RF Power와 $SiH_4$/($N_2$O+$N_2$) Ratio가 미치는 영향
김용탁, 조성민, 서용곤1, 임영민1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터
The Effect of RF Power and $SiH_4$/($N_2$O+$N_2$) Ratio in Properties of SiON Thick Film for Silica Optical Waveguide
Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${mu}{textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$AA$ to 6$AA$.
Key words: Silica waveguide, PECVD, Silicon oxynitride, Planar Lightwave Circuit(PLC)
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