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J. Korean Ceram. Soc. > Volume 38(10); 2001 > Article
Journal of the Korean Ceramic Society 2001;38(10): 942.
솔젤법에 의해 제조한 PZT(52/48) 막의 두께에 따른 우선배향성의 변화 및 이에 따른 압전 및 전기적 물성의 변화 평가
이정훈, 김태송1, 윤기현
연세대학교 세라믹공학과
1KIST 마이크로시스템센터
Thickness Dependence of Orientation, Longitudinal Piezoelectric and Electrical Properties of PZT Films Deposited by Using Sol-gel Method
Jeong-Hoon Lee, Tae-Song Kim1, Ki-Hyun Yoon
Department of Ceramic Engineering, Yonsei University
1Microsystem Research Center, KIST
Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{mu}m$ to $3.8{mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{mu}m$ to $3{mu}m$ region, and the orientation of films became random above $3{mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{mu}m$.
Key words: Sol-gel, Orientation, Thickness, Crack-free, Piezoelectric coefficient, Pneumatic method
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