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Journal of the Korean Ceramic Society 2000;37(4): 314. |
| ZnO 바리스터의 미세구조와 전기적특성에 미치는 ${ZnAl_2}{O_4}$의 영향 |
| 손세구, 김경남, 한상목1 |
삼척대학교 재료공학과
1강원대학교 신소재공학과 |
| Effects of ${ZnAl_2}{O_4}$ on the Microstructure and Electrical Properties of ZnO Varistor |
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| ABSTRACT |
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Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{circ}C$ and finished at 110$0^{circ}C$, reaching a maximum shrinkage rate at 80$0^{circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${mu}{textrm}{m}$. ZnO grain size changed little up to 110$0^{circ}C$, but increased markedly above 115$0^{circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${mu}{textrm}{m}$ of ZnO grain size. |
| Key words:
${ZnAl_2}{O_4}$, ZnO, Varistor, Microstructure, Electrical properties |
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