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J. Korean Ceram. Soc. > Volume 36(12); 1999 > Article
Journal of the Korean Ceramic Society 1999;36(12): 1316.
결정립계가 PZT 박막의 유전 특성에 미치는 영향
이장식, 박응철1, 박정호1, 이병일1, 주승기
서울대학교 재료공학부
1서울대학교 재료공학
Effects of Grain Boundaries on the erroelectric Properties of the PZT Thin Films
In this stud PZT thin films were prepared on Pt substrate using crystallized PZT dots as a seed for formation of large grained PZT thin films through lateral growth. Effects of the grain boundaries on the electrical properties of thus obtained PZT thin films were investigated by locating the upper Pt electrode of about 8$mutextrm{m}$ in a diameter right on the grain boundaries in a controlled manner. t turned out that when there was no grain boundary the best ferroelectric and electrical performance could be obtained as expected. Pr(remanent polarization) JL(leakage current density) at 2V and EBD (breakdown field) were found to be 30${mu}$C/cm2 8.47${times}$10-8 A/cm2 and 1.24MV/cm respectively. When one-grain boun-dary was contained in the area measured Pr=21${mu}$C/cm2, JL==1.24${times}$10-5 A/cm2 at 2V and EBD=0.64MV/cm. More drastic change could be observed in fatigue test. No appreciable degradation in the ferroelectric peroformance could be observed in grain boundary free PZT films up to 2${times}$1011 cycles at 1 MHz. However serious degradation could be observed after 4.4${times}$106 cycles when one-grain boundary was contained and after 1.4${times}$104 cycle when four-grain bondaries were contained in the area measured,
Key words: PZT, Thin film, Rosette, Seed, Sputtering, Single grain, Grain boundary
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