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J. Korean Ceram. Soc. > Volume 36(12); 1999 > Article
Journal of the Korean Ceramic Society 1999;36(12): 1369.
$SrBi_2Ta_2O_9$ 박막에서 Bi에 대한 Sb 치환
김주형, 이전국, 김용태1, 채희권1
한국과학기술연구원 박막기술연구센터
1한국외국어대학교 화학과
Role of Sb Substitution for Bi Site in $SrBi_2Ta_2O_9$ Thin film
In order to substitue Sb for Bi site in SrBi2Ta2O9 thin films spin-coated with different Sb/Bi ratio solutions were post-annealed at 80$0^{circ}C$ We observed crystal structure microstructure of SrBi2-xSbxTa2O9 thin films and binding state of Sb in SrBi2-xSbxTa2O9 thin films with change of the Sb contents. Oxidation of Sb3+ ions was generated by heat treatment in O2 flow. Therefore Sb was not substituted for Bi site and pyrochlore phase was formed due to the Bi deficiency. It was suggested that Sb would make a compound with Sr or Bi within the voids generated by Ta-O octahedral framework of pyrochlore structure. Remenat polarization value in Pt/SrBi1.9Sb0.1Ta2O9/Pt capacitor was low due to the formation of pyrochlore phase
Key words: $SrBi_2Ta_2O_9$, Sb substitution, Pyrochlore
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