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J. Korean Ceram. Soc. > Volume 36(2); 1999 > Article
Journal of the Korean Ceramic Society 1999;36(2): 116.
Plused Laser Depositon을 이용한 Nb doped SrTiO$_3$ 박막의 제작과 최적 조건
안진용, Seishiro Ohya1, 최승철
아주대학교 재료공학과
1일본 가나가와현 산업기술종합연구소
Preparation of Nb doped SrTiO$_3$ Film by Pulsed Laser Deposition and Optimum Processing Conditions
0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.
Key words: Pulsed Laser Deposition, Nb doped SrTiO$_3$ thin film, MgO substrate, Processing conditions
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