Synthesis of Silicon Carbide Whiskers (II): Stacking Faults

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J. Korean Ceram. Soc. > Volume 36(1); 1999 > Article

Journal of the Korean Ceramic Society 1999;36(1): 36.

탄화규소 휘스커의 (II): 적층결함

최헌진, 이준근

한국과학기술연구원 복합기능세라믹스 연구센터

Synthesis of Silicon Carbide Whiskers (II): Stacking Faults

ABSTRACT

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $mutextrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$mutextrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

Key words: Silicon Carbide Whiskers, Stacking Faults, Diameter