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Journal of the Korean Ceramic Society 1998;35(9): 945. |
| 솔-젤법을 이용한 Bismuth Layered Structure를 가진 강유전성 박막의 제조 및 특성평가에 관한 연구 |
| 주진경, 송석표, 김병호 |
| 고려대학교 재료공학과 |
| The preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process |
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| ABSTRACT |
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Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{circ}C$to 780$^{circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{circ}C$ and then SBT thin films were annealed at 800$^{circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{circ}C$ remanant polarization values (2Pr) were 6.7 9 ${mu}$C/cm2 and those of leakage current densities were 3.73${times}$10-7 1.32${times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS. |
| Key words:
MOD, SBT, RTA, Post annealing, Layered perovskite, Fluorite |
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