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J. Korean Ceram. Soc. > Volume 35(8); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(8): 827.
Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향
박종만, 김석, 최두진1, 고대홍
연세대학교 세라믹공학과
1연세대학교 세라믹공학
The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films
ABSTRACT
Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${AA}$ and 160${AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{circ}C$ and 260$^{circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${AA}$ Cu seeded substrate was lower then that of 40 ${AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.
Key words: CVD, Cu metauization, Seed layer, Sputtering
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