Silicidation of Co/M/(100) Si bilayer Structures

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J. Korean Ceram. Soc. > Volume 35(5); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(5): 505.

Co/내열금속/(100) Si 이중층 구조의 실리사이드화

권영재, 이종무¹, 배대록², 강호규²

인하대학교 금소공학과
¹인하대학교 금속공학과
²삼성전자 반도체연구소 LS 공정개발

Silicidation of Co/M/(100) Si bilayer Structures

ABSTRACT

The silicide formation mechanisms of Co/Hf and Co/Nb bilayer on (100) Si have been investigated. We ob-served that crystallographic orientationso f the 500$^{circ}C$ formed cobalt silcides were different each other with the varying intermediate layers. Epitaxial and non-epitaxial CoSi2 formed simultaneously in Co/Hf/(100Si. While only non-epitaxial CoSi2 formed in Co/Nb/(100) Si. The reason why the crystallographic orientation of CpSi2 is different for those two systems seemed to be relate to the formation and decomposition of stable reaction barriers at high temperature. The stable reaction barrier formed at high temperature could control the uniform diffusion of Co atoms which enables epitaxial growth of CoSi2

Key words: Co/M bilayer, Silicide, Silicate, Epitaxial growth, Reaction barrier