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J. Korean Ceram. Soc. > Volume 35(3); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(3): 245.
$YNbO_4에;Bi^{3+}$가 도핑된 형광체의 빛발광 및 저전압 음극선발광 특성
한정화, 김현정, 박희동
한국과학연구소 화학소재연구단
Photo- and Cathod-luminesent Properties of $YNbO_4$ : Bi Phosphors
Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+};doped;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.
Key words: $YNbO_4$, $Bi^{3+}$, doping, Photoluminescence, Cathodoluminescence
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