Preparation and Electrical Properties of the Ferroelectric <TEX>$Pb_{1+x}$</TEX>(<TEX>$Fe_{0.5}$</TEX><TEX>$Nb_{0.5}$</TEX>)<TEX>$O_3$</TEX> Thin Films by Sputtering Method

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J. Korean Ceram. Soc. > Volume 35(3); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(3): 294.

스퍼터링법에 의한 강유전성 $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ 박막의 제조 및 전기적 특성에 관한 연구

장영일, 김장엽, 임대순, 김병호

고려대학교 재료공학과

Preparation and Electrical Properties of the Ferroelectric $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ Thin Films by Sputtering Method

ABSTRACT

$Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ films have been synthesized on Pt/Ti/$SiO_2$/Si substrates using rfmagnetron sputtering Concentration of Fe and Nb in the deposited films was adjusted to near stoichiometry through the control of target composition, Films deposited with adjusted to near stoichiometry showed better electrical properties such as dielectic and leakage characteristics. Crystallinity and dielectric constant increased with increasing excess PbO upto 9 mol% This study also showed that dielectric constant and leakage current characteristics improved by optimum content of $O_2$ flow during deposition.

Key words: $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$, Sputtering, Ferroelectric thin films, XRD, Dielectric constant