Electrical and Optical properties of B-doped ZnO films Deposited by RF Magnetron Sputtiering

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J. Korean Ceram. Soc. > Volume 35(1); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(1): 17.

RF 마그네트론 스퍼터링법으로 증착한 B-doped ZnO 박막의 전기 및 광학적 특징

임주수, 이재신

울산대학교 공과대학 재료금속공학부

Electrical and Optical properties of B-doped ZnO films Deposited by RF Magnetron Sputtiering

ABSTRACT

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${times}$1018 cm-3 and 5${times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

Key words: Sputtering, ZnO, B-doping, Transparent conductor