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J. Korean Ceram. Soc. > Volume 34(12); 1997 > Article
Journal of the Korean Ceramic Society 1997;34(12): 1227.
기판온도 및 스퍼터가스에 따른 ZnO 박막의 우선배향성, 화학조성, 물리적특성 변화
김병진, 조남희
인하대학교 무기재료공학과
Effects of Substrate Temperature and Sputter Gas on the Physical Characteristics, Chemical Composition and Preferred Orientation of ZnO Thin Films
ZnO thin films were prepared by rf-magnetron sputter at various conditions. Crystallinity, microstructure, chemical composition, and optical composition, and optical properties of the films were investigated as functions of substrate temperature (R. T.-50$0^{circ}C$) an sputter gas (O2/Ar=0-50%). ZnO thin films grown at 50$0^{circ}C$ with sputter gas of pure argon as well as at R. T. with sputter gas of a mixture of argon & oxygen(O2/Ar=2%) exhibit a strong tendency of (002) preferred orientation, compared with a considerable random orientation at the other conditions. The thin films with (002) preferred orientation has a chemical stoichiometry of Zn/O-1.01, a band gap of 3.3eV, and a packing density of 98% respectively.
Key words: ZnO thin film, Rf-magnetron sputter, Preferred orientation, Chemical stoichiometry
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