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J. Korean Ceram. Soc. > Volume 34(12); 1997 > Article
Journal of the Korean Ceramic Society 1997;34(12): 1275.
Pr-첨가 ZnO 바리스터의 전기적 특성
곽민환, 이상기, 조성걸
경상대학교 공과대학 전자재료공학과, 첨단소재연구소
Electrical Properties of Pr-doped ZnO Varistors
ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{circ}C$ and 135$0^{circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{circ}C$ showed better varistor characteristic than those fired at 135$0^{circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.
Key words: Pr, ZnO, Varistor, Electrical properties, Potential barrier height
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