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J. Korean Ceram. Soc. > Volume 34(10); 1997 > Article
Journal of the Korean Ceramic Society 1997;34(10): 1060.
La 첨가가 DRAM 캐퍼시터용 PLZT 박막의 특성에 미치는 영향
국민대학교 금속재료공학부
The Effects of La Doping on Characteristics of PLZT Thin Films for DRAM Capacitor Applications
In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.
Key words: PLZT, Sol-gel, DRAM, Capacitor, Ferroelectrics
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