Interfacial Characteristics of <TEX>$beta$</TEX>-SiC Film Growth on (100) Si by LPCVD Using MTS

,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 34(8); 1997 > Article

Journal of the Korean Ceramic Society 1997;34(8): 825.

MTS를 사용한 LPCVD 법에 의한 (100)Si 위의 $beta$-SiC 증착 및 계면특성

최두진, 김준우

연세대학교 세라믹공학과

Interfacial Characteristics of $beta$-SiC Film Growth on (100) Si by LPCVD Using MTS

ABSTRACT

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{circ}C$ on carbonized Si by 3% C2H2, at 105$0^{circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

Key words: SiC thin film, (100) Si, Chemical vapor deposition, Carbonization, Interfacial defects