Effect of Deposition Temperature and Oxygen on the Growth of <TEX>$RuO_2$</TEX> Thin Films Deposited by Metalorganic Chemical Vapor Deposition

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J. Korean Ceram. Soc. > Volume 34(3); 1997 > Article

Journal of the Korean Ceramic Society 1997;34(3): 241.

금속유기 화학증착법으로 증착시킨 $RuO_2$박막의 성장에 미치는 증착온도와 산소의 영향

신웅철, 윤순길

충남대학교 재료공학과 전자요업연구실

Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition

ABSTRACT

RuO2 thin films were deposited on SiO2(1000$AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{circ}C$. RuO2 thin films deposited onto SiO2(1000$AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{circ}C$ was 52.7$mu$$Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

Key words: MOCVD, $RuO_2$, Resistivity