Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using <TEX>$BCl3-NH3-Ar$</TEX> Mixed Gas

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J. Korean Ceram. Soc. > Volume 34(3); 1997 > Article

Journal of the Korean Ceramic Society 1997;34(3): 249.

$BCl3-NH3-Ar$계의 플라즈마화학증착공정을 이용한 질화붕소막의 합성

박범수, 백영준, 은광용

한국과학기술연구원 세라믹스연구부

Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using $BCl3-NH3-Ar$ Mixed Gas

ABSTRACT

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

Key words: Boron nitride, $BCl3-NH3-Ar$, High frequency plasma assisted CVD