A Study on the Silicidation of Thick Co/Ti Bilayer

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J. Korean Ceram. Soc. > Volume 33(9); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(9): 1012.

두꺼운 이중층 Co/Ti 막의 실리사이드화에 관한 연구

이병욱, 권영재, 이종무, 김영욱¹

인하대학교 금속공학과
¹삼성전자

A Study on the Silicidation of Thick Co/Ti Bilayer

ABSTRACT

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

Key words: Salicide, $CoSi_2$, $TiSi_2$, Co/Ti bilayer, Ti-Co-Si