| Home | E-Submission | Sitemap | Login | Contact Us |  
top_img
J. Korean Ceram. Soc. > Volume 33(7); 1996 > Article
Journal of the Korean Ceramic Society 1996;33(7): 761.
화학증착 탄화규소에 의한 표면 개질
김한수, 최두진, 김동주
연세대학교 세라믹공학과
Surface Modification Using CVD-SiC
ABSTRACT
Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{circ}C$ played an important role in the changed of preferred orientation and surface roughness.
Key words: SiC film, Chemical vapor deposition, Deplation effects, Facet structure
TOOLS
PDF Links  PDF Links
Full text via DOI  Full text via DOI
Download Citation  Download Citation
CrossRef TDM  CrossRef TDM
  E-Mail
Share:      
METRICS
538
View
8
Download
Related articles
Surface Modification of Silica Aerogels  1996 ;33(12)
The Study on Surface Modification of Alumina Membrane by CVD  1995 ;32(12)
Editorial Office
Meorijae Bldg., Suite # 403, 76, Bangbae-ro, Seocho-gu, Seoul 06704, Korea
TEL: +82-2-584-0185   FAX: +82-2-586-4582   E-mail: ceramic@kcers.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Ceramic Society.                      Developed in M2PI