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J. Korean Ceram. Soc. > Volume 33(7); 1996 > Article
Journal of the Korean Ceramic Society 1996;33(7): 802.
D.C Magnetron Reactive Sputtering 법으로 증착한 $PbTiO_3$ 박막의 열처리에 따른 c-축 배향성의 변화
이승현, 권순용, 최한메, 최시경
한국과학기술원 재료공학과
Effect of Annealing on c-axis Orientation of $PbTiO_3$ Thin Films by D.C magnetron Reactive Sputtering
PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.
Key words: $PbTiO_3$, Reactive sputtering, C-axis orientation, Residual stress, Growth lattice model
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