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J. Korean Ceram. Soc. > Volume 33(6); 1996 > Article
Journal of the Korean Ceramic Society 1996;33(6): 665.
솔-젤법에 의한 강유전성 PFN 박막의 제조 및 특성평가
류재율, 김병호, 임대순
고려대학교 재료공학과
Fabrication and Characterization of Ferroelectric PFN Thin Film by Sol-Gel Processing
Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$AA$ PFN thin film annealed at $650^{circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${mu}{textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.
Key words: Sol-gel processing, Ferroelectrics, PFN thin films, Rapid thermal annealing, Dielectric properties
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