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Journal of the Korean Ceramic Society 1996;33(5): 531. |
| Mn 도핑한 $ZnGa_2O_4$ 형광체의 제조 및 빛발광 특성 |
| 류호진, 박희동 |
| 한국화학연구소 무기소재연구부 |
| Preparation and Photoluminescence of Mn-Doped $ZnGa_2O_4$ Phosphors |
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| ABSTRACT |
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ZnGa2O4 and Mn-doped ZnGa2O4 were synthesized using the state reaction method to investigate their photoluminescence characteristics depending on Mn concentration. Under 254nm excitation, ZnGa2O4 exhibited a broad-band emission extending from 330 nm to 610 nm peaking at 450nm. On the other hand Mn-doped ZnGa2O4 showed a new strong narrow-band emission peaking at 504 nm and maximum intensity at the doping concentration of 0.006 mole Mn. |
| Key words:
Photoluminescence, $ZnGa_2O_4$, Mn doping Spinel structure |
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