Consideration on <tex>$H_2S$</tex> Sensing Mechanism of CuO-<tex>$SnO_2$</tex> Thick Film through the Analysis of the Temperature-Electrical Resistance Characteristics

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J. Korean Ceram. Soc. > Volume 33(4); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(4): 379.

온도-전기저항 특성 해석을 통한 CuO-$SnO_2$ 후막 소자의 $H_2S$ 감지기구 고찰

유도준, 준타마키¹, 박수잔, 노보류야마조에²

서울대학교 무기재료공학과
¹일본 큐슈대학교
²일본큐슈대학교

Consideration on $H_2S$ Sensing Mechanism of CuO-$SnO_2$ Thick Film through the Analysis of the Temperature-Electrical Resistance Characteristics

ABSTRACT

The H2S sensing mechanism of CuO-SnO2 was confirmed by analyzing the electrical-resistance variation with temperature under an H2S atmosphere. While the resistance of CuO-SnO2 thick film at N2+H2S atmosphere was almost invariant with change in temperature it increased with increasing temperature for air +H2S atmos-phere. This behavior was analyzed using an equation derived from a basic assumption based on the H2S sensing mechanism proposed before. the experimental results are sufficiently explained with the equation derived which showed that the H2S sensing mechanism was reasonable. The equation also gave a detailed analysis and physical meaning to the behavior of the resistance variation with change in H2S concentration.

Key words: CuO, $SnO_2$, Gas sensor, $H_2S$, Sensing mechanism, p-n junction