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Journal of the Korean Ceramic Society 1995;32(11): 1262. |
| 태양광 변환을 위한 p형 GaAs 광전극의 전기적 특성 |
| 윤기현, 이정원, 강동헌1 |
연세대학교 세라믹공학과
1수원대학교 전자재료공학과 |
| Electrical Properties of p-GaAs Photoelectrode for Solar Energy Conversion |
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| ABSTRACT |
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Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively. |
| Key words:
Photoelectrochemical conversion, P-GaAs, Interface state, Flatband potential, WO3 thin film |
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