Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (III) Effect of Rapid Thermal Annealing on Microstructures and Dielectric Properties

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J. Korean Ceram. Soc. > Volume 32(8); 1995 > Article

Journal of the Korean Ceramic Society 1995;32(8): 881.

솔-젤법에 의한 강유전성 PZT 박막의 제조;(III) 급속열처리방법이 미세구조 및 유전특성에 미치는 영향

김병호, 박성호, 김병호

고려대학교 재료공학과

Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (III) Effect of Rapid Thermal Annealing on Microstructures and Dielectric Properties

ABSTRACT

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$mu$C/$textrm{cm}^2$ and 64kV/cm, respectively.

Key words: Sol-Gel process, Ferroelectric, PZT thin films, Rapid thermal annealing, Dielectric properties