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Journal of the Korean Ceramic Society 1995;32(7): 799. |
| 직류 Magnetron Sputter 법으로 제막된 ZnO : Al 박막의 전기광학 특성 |
| 김의수, 유세웅, 유병석, 이정훈 |
| 한국유리공업주식회사 기술연구소 |
| Electrical and Optical Properties of ZnO : Al Films Prepared by the DC Magnetron Sputtering System |
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| ABSTRACT |
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Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$times$10-2, they were increased to the values of 81% and 1kΩ/$square$, respectively. The films with the resistivities of 1.2~1.4$times$10-3 Ω.cm, mobilities of 11~13 $textrm{cm}^2$/V.sec and carrier concentrations of 3.5$times$1020~4.0$times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$times$10-2~1.0$times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate. |
| Key words:
DC sputtering, AZO, ZnO:Al, Transparent conductive film |
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