Characteristics of Amorphous/Polycrystalline <TEX>$BaTiO_3$</TEX> Double Layer Thin Films with High Performance Prepared New Stacking Method and its Application to AC TFEL Device

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J. Korean Ceram. Soc. > Volume 32(7); 1995 > Article

Journal of the Korean Ceramic Society 1995;32(7): 761.

새로운 적층방법으로 제조된 고품위 비정질/다결정 $BaTiO_3$ 적층박막의 특성과 교류 구동형 박막 전기 발광소자에의 응용

송만호, 이윤희, 한택상, 오명환, 윤기현¹

한국과학기술연구원 정보전자 연구부
¹연세대학교 세라믹 공학과

Characteristics of Amorphous/Polycrystalline $BaTiO_3$ Double Layer Thin Films with High Performance Prepared New Stacking Method and its Application to AC TFEL Device

ABSTRACT

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$varepsilon$r$times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$mu$C/$textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$mu$C/$textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

Key words: BaTiO3 thin film, Double layer, New stacking method. High dielectric constant, Low leakage current density, TFEL device