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J. Korean Ceram. Soc. > Volume 32(4); 1995 > Article
Journal of the Korean Ceramic Society 1995;32(4): 419.
화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-
김동주, 최두진, 김영욱1, 박상환1
연세대학교 세라믹공학과
1한국과학기술연구원 세라믹스연구부
A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor-
Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{circ}C$ and mass-transport controlled over 125$0^{circ}C$. Apparent activation energy value decreased below 120$0^{circ}C$ and deposition rate decreased above 125$0^{circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.
Key words: Silicon carbide, Chemical vapor deposition, Depletion effect, Preferred orientation
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