Dielectric Characteristics of <TEX>$Ta_2O_5$</TEX> Thin Films Prepared by ECR-PECVD

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J. Korean Ceram. Soc. > Volume 31(11); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(11): 1330.

ECR-플라즈마 화학 증착법에 의해 제조된 $Ta_2O_5$ 박막의 유전 특성

조복원, 안성덕, 이원종

한국과학기술원 전자재료공학과

Dielectric Characteristics of $Ta_2O_5$ Thin Films Prepared by ECR-PECVD

ABSTRACT

Ta2O5 films were deposited on the p-Si(100) substrates by ECR-PECVD and annealed in O2 atmosphere. The thicknesses of Ta2O5/SiO2 layers were measured by an ellipsometer and a cross-sectional TEM. Annealing in O2 atmosphere enhanced the stoichiometry of the Ta2O5 film and reduced the impurity carbon content. Ta2O5 films were crystallized at the annealing temperatures above 75$0^{circ}C$. The best leakage current characteristics and the maximum dielectric constant of Ta2O5/SiO2 film capacitor were observed in the specimen annealed at $700^{circ}C$ and 75$0^{circ}C$, respectively. The flat band voltage of the Al/Ta2O5/SiO2/p-Si MOS capacitor was varied in the range of -0.6~-1.6 V with the annealing temperature. The conduction mechanism in the Ta2O5 film, the variation of the effective oxide charge density with the annealing temperature, and the effective electric field distribution in the Ta2O5/SiO2 double layer were also discussed.